Doping concentration is 1:103 si & ge atoms
The width of the depletion is 100a0.
· Tunnel diode is acts as a conductor when it is operated in reverse bias condition vr increases
ef should be decreased.
The performance of tunnel diode is expressed in terms of ratio of
peak current to valley current.
ip/iv = 3.5 for si
=8 for
ge
= 15
for gaas
Making of tunnel diode gaas is preferred compared to all semiconductors
The width of depletion region is depends on no.of impurities
added. Tunnel
diode is abrupt junction at both sides are heavily doped.
Vp ≤ vd ≤ vv
Voltage controlled negative resistance is exhibited by tunnel
diode
Microwave oscillators
High speed switch
Adv
Simple to fabricate
Low noise
Environmental immunity
Dis adv
Low output swing
It is two terminal device so it cann’t work as amplifier